| 摘要 |
It is an object of the present invention to provide a nitride semiconductor device with low parasitic resistance by lowering barrier height to reduce contact resistance at an interface of semiconductor and metal. The nitride semiconductor device includes a GaN layer, a device isolation layer, an ohmic electrode, an n-type Al<SUB>0.25</SUB>Ga<SUB>0.75</SUB>N layer, a sapphire substrate, and a buffer layer. A main surface of the n-type Al<SUB>0.25</SUB>Ga<SUB>0.75</SUB>N layer is on (0001) plane as a main surface, and concaves are arranged in a checkerboard pattern on the surface. The ohmic electrode contacts the sides of the concaves of the n-type Al<SUB>0.25</SUB>Ga<SUB>0.75</SUB>N layer, and the sides of the concaves are on non-polar surfaces such as (11-20) plane or (1-100) plane.
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