| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a photomask with high resolution while decreasing the depth of a pattern. <P>SOLUTION: A translucent part (A) and a semi-translucent part (B) are formed on one major surface of a substrate 11 made of quartz, calcium fluoride or the like transparent to exposure light, on which phase modulation sections are respectively provided for changing phases of light propagating in a medium in contact with the pattern surface of the mask during exposure. For example, an optical film 13 provided in the translucent part (A) acts as a phase modulation section 1 having a thickness d<SB>1</SB>, while an optical film 12 provided in the semi-translucent part (B) acts as a phase modulation section 2 having a thickness d<SB>2</SB>. The phase ϕ<SB>1</SB>of transmitted light in the optical film 13 and the phase ϕ<SB>01</SB>of light propagating in the medium to the depth d<SB>1</SB>satisfy ϕ<SB>1</SB>=ϕ<SB>01</SB>+Δϕ<SB>1</SB>(wherein Δϕ<SB>1</SB>>0); while the phase ϕ<SB>2</SB>of transmitted light in the optical film 12 and the phase ϕ<SB>02</SB>of light propagating in the medium to the depth d<SB>2</SB>satisfy ϕ<SB>2</SB>=ϕ<SB>02</SB>+Δϕ<SB>2</SB>(wherein Δϕ<SB>2</SB><0). By this configuration, pattern depth can be designed by using a difference in the phase change in a plurality of optical films and a photomask with high resolution can be obtained. <P>COPYRIGHT: (C)2009,JPO&INPIT |
