| 摘要 |
A semiconductor device having a high surge resistance is provided for surge protection. A semiconductor substrate (10) included in the semiconductor device for surge protection includes a high concentration first conductivity type semiconductor substrate (1), a low concentration first conductivity type semiconductor layer (2), a high concentration first conductivity type semiconductor layer (4), a second conductivity type semiconductor layer (3), and a cylindrical low concentration second conductivity type semiconductor layer (5) which extends into the low concentration first conductivity type semiconductor layer (2) from its surface, sharing an axis line with the high concentration first conductivity type semiconductor layer (4), and has an interface (J4) with the high concentration first conductivity type semiconductor layer (4) and an interface (J5) with the second conductivity type semiconductor layer (3). The impurity concentration of the low concentration second conductivity type semiconductor layer (5) is lower than that of the second conductivity type semiconductor layer (3).
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