发明名称 Electronic/photonic integrated circuit architecture and method of manufacture thereof
摘要 A device includes a passive photonic layer located over a substrate and including at least one passive photonic element configured to propagate an optical signal therein. An electronic layer located between said substrate and said passive photonic layer includes at least one electronic device configured to propagate an electrical signal therein. An active photonic layer located over said passive photonic layer includes an active photonic device optically coupled to said passive photonic element and configured to convert between said electrical signal and said optical signal.
申请公布号 US9423560(B2) 申请公布日期 2016.08.23
申请号 US201113326583 申请日期 2011.12.15
申请人 Alcatel Lucent 发明人 Chen Long;Bernasconi Pietro;Dong Po;Zhang Liming;Chen Young-Kai
分类号 G02B6/12;H01L27/15;H01S5/026;G02B6/122;G02F1/015 主分类号 G02B6/12
代理机构 Parker Justiss, PC 代理人 Parker Justiss, PC
主权项 1. A device, comprising: a substrate; a passive photonic layer located over said substrate and including at least one silicon-based dielectric sassive photonic element configured to propagate an optical signal therein; an electronic layer located between said substrate and said passive photonic layer, and including at least one electronic device configured to propagate an electrical signal therein; and an active photonic layer located over said passive photonic layer and including a III-V based, active photonic device optically coupled to said silicon-based dielectric passive photonic element and configured to convert between said electrical signal and said optical signal, and wherein the III-V based, active photonic device is located at least partially over the silicon-based dielectric passive photonic element or is located at least partially over a silicon-based semiconductor, optical transition element overlapping the silicon-based dielectric passive photonic element.
地址 Boulogne-Billancourt FR