发明名称 |
METROLOGY USING OVERLAY AND YIELD CRITICAL PATTERNS |
摘要 |
Metrology methods are provided, which comprise identifying overlay critical patterns in a device design, the overlay critical patterns having an overlay sensitivity to process variation above a specified threshold that depends on design specifications; and using metrology targets that correspond to the identified overlay critical patterns. Alternatively or complementarily, metrology methods comprise identifying yield critical patterns according to a corresponding process window narrowing due to specified process variation, wherein the narrowing is defined by a dependency of edge placement errors (EPEs) of the patterns on process parameters. Corresponding targets and measurements are provided. |
申请公布号 |
US2016253450(A1) |
申请公布日期 |
2016.09.01 |
申请号 |
US201615082152 |
申请日期 |
2016.03.28 |
申请人 |
KLA-Tencor Corporation |
发明人 |
Kandel Daniel;Smith Mark D.;Wagner Mark;Amit Eran;Lee Myungjun |
分类号 |
G06F17/50;G01N21/93;G01N21/956 |
主分类号 |
G06F17/50 |
代理机构 |
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代理人 |
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主权项 |
1. A method comprising:
identifying overlay critical patterns in a device design; and using metrology targets that correspond to the identified overlay critical patterns. |
地址 |
Milpitas CA US |