发明名称 |
NONVOLATILE MEMORY DEVICE, OPERATING METHOD THEREOF, AND DATA STORAGE DEVICE INCLUDING THE SAME |
摘要 |
A nonvolatile memory device includes a memory cell array including a data cell area, and a mode cell area that stores write mode information of the data cell area, a mode information storage block storing previous write mode information read out from the mode cell area in a previous read operation, and a control logic reading out the write mode information from the mode cell area comparing the read-out write mode information and the previous write mode information, and reading the data cell area in a read mode selected based on a comparison result. |
申请公布号 |
US2016253124(A1) |
申请公布日期 |
2016.09.01 |
申请号 |
US201514789441 |
申请日期 |
2015.07.01 |
申请人 |
SK hynix Inc. |
发明人 |
KIM Tae Hoon |
分类号 |
G06F3/06 |
主分类号 |
G06F3/06 |
代理机构 |
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代理人 |
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主权项 |
1. A nonvolatile memory device comprising:
a memory cell array including a data cell area; a mode cell area that stores write mode information of the data cell area; a mode information storage block suitable for storing previous write mode information read out from the mode cell area in a previous read operation; and a control logic suitable for reading out the write mode information from the mode cell area, comparing the read-out write mode information and the previous write mode information, and reading the data cell area in a read mode selected based on a comparison result. |
地址 |
Gyeonggi-do KR |