发明名称 NONVOLATILE MEMORY DEVICE, OPERATING METHOD THEREOF, AND DATA STORAGE DEVICE INCLUDING THE SAME
摘要 A nonvolatile memory device includes a memory cell array including a data cell area, and a mode cell area that stores write mode information of the data cell area, a mode information storage block storing previous write mode information read out from the mode cell area in a previous read operation, and a control logic reading out the write mode information from the mode cell area comparing the read-out write mode information and the previous write mode information, and reading the data cell area in a read mode selected based on a comparison result.
申请公布号 US2016253124(A1) 申请公布日期 2016.09.01
申请号 US201514789441 申请日期 2015.07.01
申请人 SK hynix Inc. 发明人 KIM Tae Hoon
分类号 G06F3/06 主分类号 G06F3/06
代理机构 代理人
主权项 1. A nonvolatile memory device comprising: a memory cell array including a data cell area; a mode cell area that stores write mode information of the data cell area; a mode information storage block suitable for storing previous write mode information read out from the mode cell area in a previous read operation; and a control logic suitable for reading out the write mode information from the mode cell area, comparing the read-out write mode information and the previous write mode information, and reading the data cell area in a read mode selected based on a comparison result.
地址 Gyeonggi-do KR