Methods of Manufacturing Semiconductor Devices Including Gate Pattern, Multi-Channel Active Pattern and Diffusion Layer

摘要

A semiconductor device includes a gate pattern on a substrate, a multi-channel active pattern under the gate pattern to cross the gate pattern and having a first region not overlapping the gate pattern and a second region overlapping the gate pattern, a diffusion layer in the multi-channel active pattern along the outer periphery of the first region and including an impurity having a concentration, and a liner on the multi-channel active pattern, the liner extending on lateral surfaces of the first region and not extending on a top surface of the first region. Related fabrication methods are also described.

主权项

1. A method for fabricating a semiconductor device comprising:
forming a multi-channel active pattern protruding from an isolation layer; forming a dummy gate pattern on the multi-channel active pattern, the dummy gate pattern overlapping a portion of the multi-channel active pattern; forming a pre-liner layer on a top surface of the multi-channel active pattern not overlapping the dummy gate pattern; forming an impurity supply layer on the multi-channel active pattern not overlapping the dummy gate pattern; forming a first diffusion layer in the multi-channel active pattern not overlapping the dummy gate pattern by performing a first thermal process on the impurity supply layer at a first temperature; and forming a second diffusion layer in the multi-channel active pattern along an outer periphery of the multi-channel active pattern not overlapping the dummy gate pattern by performing a second thermal process on the impurity supply layer at a second temperature.