SPUTTERING TARGET COMPRISING TUNGSTEN CARBIDE OR TITANIUM CARBIDE

摘要

The present invention provides a sputtering target configured from tungsten carbide or titanium carbide, characterized in having a purity of 4N or higher and a density of 98% or higher. Specifically, an object of the present invention is to provide a sputtering target configured from tungsten carbide or titanium carbide, wherein the purity is maintained high, and the target has a high density and a uniform and high hardness and is capable of stable high speed deposition and less generation of particles.

主权项

1. A tungsten carbide sputtering target, having a purity of 4N or higher and a relative density of 98% or higher.