发明名称 |
LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, AUTHENTICATION DEVICE, AND ELECTRONIC APPARATUS |
摘要 |
A light-emitting element includes an anode, a cathode, a light-emitting layer which is provided between the anode and the cathode and emits light in a wavelength range of 700 nm or more by conducting electricity between the anode and the cathode, and an electron transport layer which is provided between the light-emitting layer and the cathode, and includes a first electron transport layer located on the cathode side and a second electron transport layer located on the light-emitting layer side, wherein organic materials contained in the light-emitting layer, a hole injection layer, the first electron transport layer, and the second electron transport layer have a glass transition temperature Tg of 135° C. or higher or do not have a glass transition temperature. |
申请公布号 |
US2016359117(A1) |
申请公布日期 |
2016.12.08 |
申请号 |
US201615157672 |
申请日期 |
2016.05.18 |
申请人 |
Seiko Epson Corporation |
发明人 |
HAMADE Yuiga;FUJITA Tetsuji |
分类号 |
H01L51/00;C09K11/02;C09K11/06 |
主分类号 |
H01L51/00 |
代理机构 |
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代理人 |
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主权项 |
1. A light-emitting element, comprising:
an anode; a cathode; a light-emitting layer which is provided between the anode and the cathode and emits light in a wavelength range of 700 nm or more by conducting electricity between the anode and the cathode; a hole injection layer which is provided between the light-emitting layer and the anode; and an electron transport layer which is provided between the light-emitting layer and the cathode, and includes a first electron transport layer located on the cathode side and a second electron transport layer located on the light-emitting layer side, wherein organic materials contained in the light-emitting layer, the hole injection layer, the first electron transport layer, and the second electron transport layer have a glass transition temperature Tg of 135° C. or higher or do not have a glass transition temperature. |
地址 |
Tokyo JP |