SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPARATUS

摘要

A solid-state imaging device includes a plurality of photoelectric conversion portions each provided in a semiconductor substrate and receives incident light through a light sensing surface, and a pixel separation portion provided to electrically separate a plurality of pixels. At least a pinning layer and a light shielding layer are provided in an inner portion of a trench provided on a side portion of each of the photoelectric conversion portions in an incident surface side, the trench includes a first trench and a second trench formed to be wider than the first trench in a portion shallower than the first trench, the pinning layer is formed in an inner portion of the first trench to cover an inside surface of the second trench, and the light shielding layer is formed to bury an inner portion of the second trench at least via the pinning layer.

主权项

1. An imaging device, comprising:
a semiconductor substrate including a first side as a light-incident side and a second side opposite to the first side; a plurality of photoelectric conversion portions disposed in the semiconductor substrate; a pinning layer disposed at the first side of the semiconductor substrate; an insulating layer disposed on the pinning layer; a trench having a lattice shape in a plan view, wherein at least part of the trench is disposed between adjacent photoelectric conversion portions of the plurality of photoelectric conversion portions, the at least part of the trench including: a first portion including the pinning layer, and a second portion including the pinning layer and the insulating layer, wherein,
a width of the first portion is smaller than a width of the second portion in a cross-section view, the insulating layer is disposed at an inner side of the pinning layer in the second portion in the cross-section view. and the insulating layer is not included in the first portion in the cross-section view.