发明名称 WING-TYPE PROJECTION BETWEEN NEIGHBORING ACCESS TRANSISTORS IN MEMORY DEVICES
摘要 A flash memory device is disposed on a semiconductor substrate. The flash memory device includes flash memory cells arranged in rows and columns. Respective flash memory cells include respective access transistors and respective floating gate transistors. The respective access transistors have respective access gates, and the respective floating gate transistors have respective control gates arranged over respective floating gates. First and second wordlines extend substantially in parallel with one another and correspond to first and second rows which neighbor one another. The first wordline is coupled to access gates of access transistors along the first row. The second wordline is coupled to access gates of access transistors along the second row. Nearest edges of the first and second wordlines include at least one wing which extends laterally outward from a sidewall of one of the first and second wordlines towards a sidewall the other of the first and second wordlines.
申请公布号 US2016358930(A1) 申请公布日期 2016.12.08
申请号 US201615237906 申请日期 2016.08.16
申请人 Taiwan Semiconductor Manufacturing Co., Ltd. 发明人 Hsieh Chia-Ta;Ho Chi-Wei;Lin Kao-Chao;Lin Josh;Su Nai-Chao;Tu Shih-Jung;Hsu Po-Kai;Lee Shih-Ching;Huang Chen-Ming
分类号 H01L27/115 主分类号 H01L27/115
代理机构 代理人
主权项 1. A flash memory device disposed on a semiconductor substrate, comprising: a plurality of flash memory cells arranged in rows and columns, wherein respective flash memory cells include respective access transistors coupled to respective floating gate transistors, and wherein the respective access transistors have respective access gates and wherein respective floating gate transistors have respective control gates arranged over respective floating gates; a plurality of control lines extending over the semiconductor substrate in a first direction and being coupled to respective control gates of respective floating gate along respective rows; a plurality of wordlines extending substantially in parallel with the respective control lines and being coupled to respective access gates of respective access transistors along respective rows; and wherein the control lines and wordlines are arranged so pairs of neighboring control lines alternate with pairs of neighboring wordlines, and wherein nearest edges of first and second wordlines of a neighboring pair include a first wing which extends laterally outward from a sidewall of one of the first or second wordlines towards a sidewall the other of the first or second wordlines.
地址 Hsin-Chu TW