| 发明名称 | Semiconductor device with structural stability | ||
| 摘要 | The present disclosure provides a semiconductor device with a structural stability. The semiconductor device includes a stack of vertical alterations of conductive layers and insulating layers; supports passing through the stack, each of the supports having a cross-section of an equilateral polygon, the supports being equidistantly arranged in a first direction and a second direction, the first and second directions crossing each other; and contact plugs electrically coupled respectively to the conductive layers, each of the contact plugs being disposed between at least two adjacent supports of the supports. | ||
| 申请公布号 | US9530742(B1) | 申请公布日期 | 2016.12.27 |
| 申请号 | US201615050984 | 申请日期 | 2016.02.23 |
| 申请人 | SK Hynix Inc. | 发明人 | Jung Sung Wook;Kim Kyung Bo;Baek Ji Hui;Jung Jang Hee |
| 分类号 | H01L23/48;H01L23/52;H01L29/40;H01L23/00;H01L23/528;H01L23/522;H01L27/115;H01L27/06 | 主分类号 | H01L23/48 |
| 代理机构 | IP & T Group LLP | 代理人 | IP & T Group LLP |
| 主权项 | 1. A semiconductor device comprising: a stack including alternately stacked conductive layers and insulating layers; supports passing through the stack, each of the supports having a cross-section of an equilateral polygon or a circular shape, the supports being equidistantly arranged in a first direction and a second direction, the first and second directions crossing each other; and contact plugs coupled respectively to the conductive layers, each of the contact plugs being disposed between at least two adjacent supports of the supports. | ||
| 地址 | Gyeonggi-do KR | ||