发明名称 |
PROCESSING SYSTEM AND METHOD FOR TREATING A SUBSTRATE |
摘要 |
A processing system and method for chemical oxide removal (COR), wherein the processing system comprises a first treatment chamber and a second treatment chamber, wherein the first and second treatment chambers are coupled to one another. The first treatment chamber comprises a chemical treatment chamber that provides a temperature controlled chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, such as HF/NH3, under controlled conditions including surface temperature and gas pressure. The second treatment chamber comprises a heat treatment chamber that provides a temperature controlled chamber, thermally insulated from the chemical treatment chamber. The heat treatment chamber provides a substrate holder for controlling the temperature of the substrate to thermally process the chemically treated surfaces on the substrate. |
申请公布号 |
EP1604387(B1) |
申请公布日期 |
2016.12.28 |
申请号 |
EP20040721066 |
申请日期 |
2004.03.16 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
HAMELIN, Thomas;WALLACE, Jay;LAFLAMME, Arthur, H., Jr. |
分类号 |
H01L21/67;C23C16/44;C25D11/02;H01L21/00;H01L21/033;H01L21/311;H01L21/677 |
主分类号 |
H01L21/67 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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