发明名称 PROCESSING SYSTEM AND METHOD FOR TREATING A SUBSTRATE
摘要 A processing system and method for chemical oxide removal (COR), wherein the processing system comprises a first treatment chamber and a second treatment chamber, wherein the first and second treatment chambers are coupled to one another. The first treatment chamber comprises a chemical treatment chamber that provides a temperature controlled chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, such as HF/NH3, under controlled conditions including surface temperature and gas pressure. The second treatment chamber comprises a heat treatment chamber that provides a temperature controlled chamber, thermally insulated from the chemical treatment chamber. The heat treatment chamber provides a substrate holder for controlling the temperature of the substrate to thermally process the chemically treated surfaces on the substrate.
申请公布号 EP1604387(B1) 申请公布日期 2016.12.28
申请号 EP20040721066 申请日期 2004.03.16
申请人 TOKYO ELECTRON LIMITED 发明人 HAMELIN, Thomas;WALLACE, Jay;LAFLAMME, Arthur, H., Jr.
分类号 H01L21/67;C23C16/44;C25D11/02;H01L21/00;H01L21/033;H01L21/311;H01L21/677 主分类号 H01L21/67
代理机构 代理人
主权项
地址