| 摘要 |
A semiconductor memory device according to the present invention includes: a bit-line sense amplifier which receives a first driving voltage and a second driving voltage, senses and amplifies a bit-line; a first driving voltage supply unit which supplies the first driving voltage while the bit-line sense amplifier operates; and a second driving voltage supply unit which supplies a negative voltage lower than the ground voltage to the second driving voltage while the bit-line sense amplifier operates. [Reference numerals] (6) First switch unit; (7) Second switch unit; (8) Free charge unit |
