Method for forming a finely patterned photoresist layer

摘要

The invention discloses an improvement in the photolithographic patterning method of a photoresist layer formed on a substrate surface with intervention of an anti-reflection coating film, in which the refractive index and the light-absorption coefficient of the anti-reflection coating film are controlled in such a way that, in a graph prepared by plotting the thickness of the anti-reflection coating film taken as the abscissa values and the reflectivity of the light for patterning exposure at the interface between the anti-reflection coating film and the photoresist layer thereon taken as the ordinate values, the range of the variation in the film thickness corresponding to an increment of 0.01 in the reflectivity in the vicinity of the minimum point on the thickness vs. reflectivity curve does not exceed ±0.01 mum.