| 发明名称 |
Tungsten encapsulated copper interconnections using electroplating |
| 摘要 |
An interconnection structure is provided wherein comprises a substrate having a dielectric layer with a via opening therein; wherein the opening has a barrier layer; and electrodeposited copper.
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| 申请公布号 |
US2002092673(A1) |
申请公布日期 |
2002.07.18 |
| 申请号 |
US20010760884 |
申请日期 |
2001.01.17 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ANDRICACOS PANAYOTIS C.;BOETTCHER STEVEN H.;MCFEELY FENTON READ;PAUNOVIC MILAN |
| 分类号 |
H01L21/288;H01L21/768;(IPC1-7):H05K1/03 |
主分类号 |
H01L21/288 |
| 代理机构 |
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