发明名称 |
Liquid phase growth process, liquid phase growth system and substrate member production method |
摘要 |
In a liquid phase growth process comprising immersing a substrate in a melt held in a crucible, a crystal material having been dissolved in the melt, and growing a crystal on the substrate, at least a group of substrates to be immersed in the melt held in the crucible are fitted to the supporting rack at a position set aside from the center of rotation of the crucible or supporting rack, and the crystal is grown on the surface of the substrate thus disposed. This can provide a liquid phase growth process which can attain a high growth rate, can enjoy uniform distribution of growth rate in each substrate and between the substrates even when substrates are set in a large number in one batch, and can readily keep the melt from reaction and contamination even when the system has a large size, and provide a liquid phase growth system suited for carrying out the process.
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申请公布号 |
US2002092464(A1) |
申请公布日期 |
2002.07.18 |
申请号 |
US20010014418 |
申请日期 |
2001.12.14 |
申请人 |
NAKAGAWA KATSUMI;SAITO TETSURO;SHOJI TATSUMI;YOSHINO TAKEHITO;NISHIDA SHOJI;UKIYO NORITAKA;IWANE MASAAKI;MIZUTANI MASAKI |
发明人 |
NAKAGAWA KATSUMI;SAITO TETSURO;SHOJI TATSUMI;YOSHINO TAKEHITO;NISHIDA SHOJI;UKIYO NORITAKA;IWANE MASAAKI;MIZUTANI MASAKI |
分类号 |
C30B19/00;C30B19/06;C30B29/06;H01L21/208;H01L31/04;(IPC1-7):C30B23/00;C30B25/00;C30B28/12;C30B28/14 |
主分类号 |
C30B19/00 |
代理机构 |
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代理人 |
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地址 |
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