发明名称 Ru TARGET MATERIAL AND PRODUCTION METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To obtain an Ru target material which has high purity and good sputtering characteristics and machining characteristics. SOLUTION: The Ru target material has a relative density of >=98%, and the average crystal grain size in the microstructure is 8 to 100μm. Also, the area ratio of the grains of 10 to 100μm present in a fractured face is >=50 area%. Further, the Ru target material preferably has purity of >=5 N, hardness of <=400 Hv, deflective strength of >=350 MPa, and thermal conductivity of >=120 W/m.K.
申请公布号 JP2002275625(A) 申请公布日期 2002.09.25
申请号 JP20010078798 申请日期 2001.03.19
申请人 HITACHI METALS LTD 发明人 CHIWATA NOBUHIKO;KAN TAKESHI;UENO TOMONORI
分类号 B22F1/00;B22F3/15;C22C1/04;C23C14/34;H01L21/8246;H01L27/105;(IPC1-7):C23C14/34 主分类号 B22F1/00
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