| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high-luminance semiconductor light emitting element by forming a metal reflecting layer by using an opaque semiconductor substrate; and its manufacturing method. <P>SOLUTION: This semiconductor light emitting element is composed of: a GaAs substrate structure having a GaAs layer 3, a first metal buffer layer 2 arranged on a surface of the GaAs layer, a first metal layer 1 arranged on the first metal buffer layer, and a second metal buffer layer 4 and a second metal layer 5 arranged on the back surface of the GaAs layer; and a light emitting diode structure arranged on the GaAs substrate structure, and having a third metal layer 12, a metal contact layer 11 arranged on the third metal layer, a p-type clad layer 10 arranged on the metal contact layer, a multiple quantum well layer 9 arranged on the p-type clad layer, an n-type clad layer 8 arranged on the multiply quantum well layer, and a window layer 7 arranged on the n-type clad layer; and is characterized by sticking the GaAs substrate structure on the light emitting diode structure by using the first metal layer 1 and the third metal layer 12. <P>COPYRIGHT: (C)2009,JPO&INPIT |
