| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a nitride semiconductor light emitting element by which the inner quantum efficiency of the nitride semiconductor light emitting element including a multilayer film structure can be improved. <P>SOLUTION: In the method of manufacturing the nitride semiconductor light emitting element including a nitride semiconductor active layer (105) held between n-type nitride semiconductor layers (103, 104) and p-type nitride semiconductor layers (106-108) on a substrate (101), at least one of the n-type layers, the active layer and the p-type layers includes the multilayer film structure, and a surfactant material is supplied to a crystal growth surface at the point of time immediately before the crystal growth of a layer constituting the multilayer film structure, during the growth, or after the growth. <P>COPYRIGHT: (C)2009,JPO&INPIT |
