MULTILAYER SUBSTRATE INCLUDING GaN LAYER, METHOD FOR MANUFACTURING THE MULTILAYER SUBSTRATE INCLUDING GAN LAYER, AND DEVICE

摘要

Provided are a multilayer substrate, which uses a single crystal that can be formed with a large diameter and includes a GaN layer, a method for manufacturing the multilayer substrate, and a device using the multilayer substrate. The method for manufacturing the multilayer substrate includes a germanium growing step of epitaxially growing a germanium layer on a (111) silicon substrate by chemical vapor deposition; a heat treatment step of performing heat treatment to the germanium layer on the obtained silicon substrate within a temperature range of 700-900°C; and a GaN growing step of epitaxially growing the GaN layer on the germanium layer after the heat treatment.