发明名称 SUBSTRATE PROCESSING APPARATUS ANS SUBSTRATE PROCESSING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a substrate processing apparatus and a substrate processing method, which make it possible to discharge a process liquid which is temperature controlled at intended high temperature from a process liquid nozzle while achieving reduction in time required for pre-dispensing and/or achieving reduction in consumption of a process liquid for pre-dispensing.SOLUTION: A substrate processing apparatus 1 includes: a chemical nozzle 7 having a nozzle pipe 41 in which a chemical flow path 42 is zoned inside and a discharge port 46 where the chemical flow path 42 opens; a circulation route 22 which holds the chemical while keeping the temperature at a predetermined high temperature higher than ordinary temperature; and a first chemical pipe 11 for guiding the chemical held by the circulation route 22 to the chemical nozzle 7. The substrate processing apparatus further includes an induction heating unit 9 for inductively heating a pipe wall 41b of the nozzle pipe 41 which is composed to include a magnetic induction body material.SELECTED DRAWING: Figure 5
申请公布号 JP2016167568(A) 申请公布日期 2016.09.15
申请号 JP20150047569 申请日期 2015.03.10
申请人 SCREEN HOLDINGS CO LTD 发明人 KOBAYASHI KENJI
分类号 H01L21/304;H01L21/027;H01L21/306 主分类号 H01L21/304
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