| 发明名称 |
DEVICES WITH THINNED WAFER |
| 摘要 |
Methods, apparatuses and devices are described where a main wafer is irreversibly bonded to a carrier wafer and thinned to reduce a thickness of the main wafer, for example down to a thickness of 300 μm or below. |
| 申请公布号 |
US2016332873(A1) |
申请公布日期 |
2016.11.17 |
| 申请号 |
US201615223794 |
申请日期 |
2016.07.29 |
| 申请人 |
Infineon Technologies AG |
发明人 |
Brockmeier Andre;Kalousek Christian;Maier Katharina;Zorn Peter;Schreiber Kai-Alexander;Solazzi Francesco |
| 分类号 |
B81C1/00;B81C99/00 |
主分类号 |
B81C1/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An apparatus, comprising:
a carrier wafer bonding device configured to irreversibly bond a carrier wafer to a main wafer at a front side of the main wafer, a thinning device configured to thin the main wafer from a back side thereof, and a material removal device configured to selectively remove material from the back side of the main wafer, the second material removal device being downstream of the thinning device. |
| 地址 |
Neubiberg DE |
