发明名称 |
High speed time interleaved sense amplifier circuits, methods and memory devices incorporating the same |
摘要 |
A memory device can include first sense amplifiers coupled to bit lines of a memory array in a first access period and de-coupled from the bit lines in a first sense period, the first sense amplifiers configured to amplify data signals from the memory array in the first sense period; and second sense amplifiers coupled to the bit lines in a second access period that follows the first access period and configured to amplify data signals from the memory cell array in a second sense period that overlaps the first sense period. |
申请公布号 |
US8675434(B1) |
申请公布日期 |
2014.03.18 |
申请号 |
US201213459206 |
申请日期 |
2012.04.29 |
申请人 |
WHATELY MORGAN;TRAN THINH;CYPRESS SEMICONDUCTOR CORPORATION |
发明人 |
WHATELY MORGAN;TRAN THINH |
分类号 |
G11C7/00 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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