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发明名称
THE HIGH-DOPING GROWTH METHOD OF GA-AS WAFER FOR INFRARED DIODE
摘要
申请公布号
KR0156016(B1)
申请公布日期
1998.10.15
申请号
KR19930021116
申请日期
1993.10.12
申请人
LG CABLE MACHINERY CO.,LTD
发明人
LEE, HO-SUNG;CHOE, MIN-HO;KOO, BONN-JO
分类号
H01L21/208;H01L31/09;(IPC1-7):H01L31/09
主分类号
H01L21/208
代理机构
代理人
主权项
地址
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