NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device that suppresses an increase in block size.SOLUTION: A nonvolatile semiconductor memory device includes: a laminated body provided on a ground layer and in which a plurality of electrode layers and a plurality of insulating layers are alternately stacked; a plurality of first channel body layers; a memory film provided between each of the plurality of first channel body layers and each of the plurality of electrode layers; a plurality of selection gates provided on the laminated body; a second channel body layer; a gate insulating film provided between each of the plurality of selection gates and the second channel body layer; and first wiring electrically connected to at least one of the plurality of electrode layers. The laminated body has a through hole penetrating from a top surface of the laminated body to a bottom surface of the laminated body outside a cell region where the plurality of first channel body layers and the memory film are arranged. The first wiring leads out from the top surface side of the laminated body to the bottom surface side of the laminated body through the through hole.