EPITAXIAL WAFER, MANUFACTURING METHOD THEREOF AND ULTRAVIOLET LIGHT EMITTING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an epitaxial wafer, manufacturing method thereof and an ultraviolet light emitting device capable of increasing the flatness and the crystallinity on the surface of a single crystal aluminum nitride layer formed over a silicon substrate.SOLUTION: An epitaxial wafer 1 includes: a silicon substrate 11; a single crystal aluminum nitride layer 16 formed over one surface of the silicon substrate 11; and an aluminum deposit 12 formed between the silicon substrate 11 and the aluminum nitride layer 16 to prevent formation of a silicon nitride. The epitaxial wafer 1 includes plural cavity parts 17 formed across the silicon substrate 11, the aluminum deposit 12 and the aluminum nitride layer 16. The aluminum deposit 12 and the aluminum nitride layer 16 are formed in a pressure reduction MOVPE apparatus. The epitaxial wafer 1 is used for manufacturing of ultraviolet light emitting devices.