| 摘要 |
A high-efficiency power semiconductor rectifier device ( 10 ) comprising a deltaP++ layer ( 12 ), a P-body ( 14 ), an N-drift region ( 16 ), an N+ substrate ( 18 ), an anode ( 20 ), and a cathode ( 22 ). The method of fabricating the device ( 10 ) comprises the steps of depositing the N-drift region ( 16 ) on the N+ substrate ( 18 ), implanting boron into the N-drift region ( 16 ) to create a P-body region ( 14 ), forming a layer of titanium silicide ( 56 ) on the P-body region ( 14 ), and concentrating a portion of the implanted boron at the interface region between the layer of titanium silicide ( 56 ) and the P-body region ( 14 ) to create the deltaP++ layer ( 12 ) of supersaturated P-doped silicon.
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