P-SIDE LAYERS FOR SHORT WAVELENGTH LIGHT EMITTERS

摘要

A light emitting device comprises a p-side heterostructure having a short period super lattice (SPSL) which is formed of alternating layers of AlxhighGa1-xhighN doped with p-type dopant and AlxlowGa1-xlowN doped with the p-type dopant. In this section, the xhigh is greater than or equal to the xlow and the xhigh is less than or equal to 0.9. Each layer of the SPSL has a thickness below AlGaN double-layers of 6 kinds. [Reference numerals] (AA,BB) p-side; (CC) p-contact unit; (DD) p contact layer; (EE) p-side superlattice; (FF) Electron blocking layer; (GG) active area; (HH) n-side hetero-structure; (II) Substrate; (JJ) p-side hetero-structure; (KK) n-contact unit