Method for growing epitaxial diamond

摘要

A method for growing epitaxial diamond is provided here. A metallic layer is deposited on a diamond substrate and is followed by an epitaxial diamond film deposited on top of the metallic layer. As a buffer layer, the metallic layer relieves stress accumulated in the thin film of the epitaxial diamond to prevent cracks. In consequence, diamond epitaxial layers with desired thickness and good quality can be obtained.

主权项

1. A method for growing epitaxial diamond comprising:
providing a diamond substrate with an upper surface; depositing at least a metallic layer on the diamond substrate, wherein the metallic layer is a non-continuous film to expose portion of the upper surface, and a metal composition of the metallic layer has at least one of the following features that lattice mismatch between the metal composition and diamond is less than 15% and dissolution rate of carbon in the metal composition is less than 2 wt %; providing a reaction atmosphere; and depositing an epitaxial diamond layer on the exposed upper surface of the diamond substrate and then the epitaxial diamond layer laterally growing to form a continuous film to cover the metallic layer.