BOTTOM-UP METAL GATE FORMATION ON REPLACEMENT METAL GATE FINFET DEVICES

摘要

A method of fabricating a replacement metal gate in a transistor device, a fin field effect transistor (finFET), and a method of fabricating a finFET device with the replacement metal gate are described. The method of fabricating the replacement metal gate includes forming a dummy gate structure (140) over a substrate (110), the dummy gate structure (140) being surrounded by an insulating layer (120), and removing the dummy gate structure (140) so as to expose a trench (121) within the insulating layer (120). The method also includes conformally depositing a dielectric material layer (160) and a work function metal layer (170) over the insulating layer (120) and in the trench (121) and removing the dielectric material layer (160) and the work function metal layer (170) from a tip surface of the insulating layer (120), recessing the work function metal layer (170) below a top of the trench (121), and selectively forming a gate metal (190) only on exposed surfaces of the work function metal layer (170).