| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has improved humidity resistance.SOLUTION: A semiconductor device 1A comprises: a semiconductor layer 10 having an active region 11 which provides a semiconductor structure for a field effect transistor and an inactive region 12 provided around the active region 11; a gate electrode 20 provided on the active region 11; a source electrode 40 and a drain electrode 30 which are provided on the active region 11 on both sides of the gate electrode 20; a drain pad 60 electrically connected with the drain electrode 30; an insulation film 82 which covers the drain electrode 30 and the drain pad 60 and has an opening 82b on the drain pad 60; and a metal guard part 90 provided in a region between the source electrode 40 and the drain pad 60, and in vicinity to the inactive region 12.SELECTED DRAWING: Figure 1 |
