| 摘要 |
The polishing pad is suitable for polishing patterned semiconductor substrates containing at least one of copper, dielectric, barrier and tungsten. The polishing pad includes a polymeric matrix; and the polymeric matrix being a polyurethane reaction product of a polyol blend, a polyamine or polyamine mixture and toluene diisocyanate. The polyol blend is a mixture of 15 to 77 weight percent total polypropylene glycol and polytetramethylene ether glycol; and the mixture of polypropylene glycol and polytetramethylene ether glycol having a weight ratio of the polypropylene glycol to the polytetramethylene ether glycol from a 20 to 1 ratio to a 1 to 20 ratio. The polyamine or polyamine mixture is 8 to 50 weight percent; and the toluene diisocyanate is 15 to 35 weight percent total monomer or partially reacted toluene diisocyanate monomer. |
