| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which reduces leakage current between electrodes by forming a plurality of protection film layers on a compound semiconductor layer and in a region between the electrodes.SOLUTION: A semiconductor device of an embodiment comprises: a substrate; a compound semiconductor layer provided on the substrate; a first electrode provided on the compound semiconductor layer; a second electrode provided on the compound semiconductor layer and at a distance from the first electrode; a protection layer provided on the compound semiconductor layer and in a region between the first electrode and the second electrode; an insulation layer which is provided on the protection layer and contains less hydrogen than the protection layer; and a heat radiation layer provided on the insulation layer.SELECTED DRAWING: Figure 1 |
