CONTINUOUS EVANESCENT PERTURBATION GRATINGS IN A SILICON PHOTONIC DEVICE

摘要

A method of fabricating a silicon photonic device and a system including a silicon photonic device are described. The method includes forming a photoresist layer on a silicon layer and patterning a mask formed on the photoresist layer. The patterning defines a primary optical waveguide region, a first evanescent perturbation grating region on a first side of the primary optical waveguide region and a second evanescent perturbation grating region on a second side, opposite the first side, of the primary optical waveguide. The first evanescent perturbation grating region and the second evanescent perturbation grating region are defined as continuous regions along a length of the silicon photonic device. The method also includes etching the photoresist layer and the silicon layer according to a pattern of the patterned mask.

主权项

1. An optical system, comprising:
an incident light source; and a silicon photonic device, comprising:
a primary optical waveguide region;a first evanescent perturbation grating region on a first side of the primary optical region; anda second evanescent perturbation grating region on a second side, opposite the first side, of the primary optical region, wherein the first evanescent perturbation grating region and the second evanescent perturbation grating region are formed as continuous features in a same silicon layer as the primary optical waveguide region, wherein the primary optical waveguide region, the first evanescent perturbation grating region, and the second evanescent perturbation grating region are physically separated from each other.