| 发明名称 |
QUANTUM DOT PROTECTIVE FILM, QUANTUM DOT FILM USING SAME, AND BACKLIGHT UNIT |
| 摘要 |
A first quantum dot protective film comprises a first barrier film including a silica deposition layer, and a first diffusion layer. An O/Si ratio of the silica deposition layer is 1.7 or more and 2.0 or less on an atomic ratio basis, and a refractive index of the silica deposition layer is 1.5 or more and 1.7 or less; and a reflectance of the first quantum dot protective film is 10% or more and 20% or less and a transmittance the first quantum dot protective film is 80% or more and 95% or less, at all wavelengths of 450 nm, 540 am, and 620 nm. |
| 申请公布号 |
US2016327719(A1) |
申请公布日期 |
2016.11.10 |
| 申请号 |
US201515109337 |
申请日期 |
2015.07.16 |
| 申请人 |
TOPPAN PRINTING CO., LTD. |
发明人 |
KITAHARA Tsukasa;TOKINOYA Osamu;NISHIKAWA Takeshi |
| 分类号 |
F21V8/00;B32B27/36;B32B7/12;B32B27/08 |
主分类号 |
F21V8/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A quantum dot protective film comprising a barrier film including a silica deposition layer and a diffusion layer,
wherein a ratio of oxygen to silicon, an O/Si ratio, contained in the silica deposition layer is 1.7 or more and 2.0 or less on an atomic ratio basis; and a refractive index of the silica deposition layer is 1.5 or more and 1.7 or less; a reflectance of the quantum dot protective film is 10% or more and 20% or less and a transmittance of the quantum dot protective film is 80% or more and 95% or less, at all wavelengths of 450 nm, 540 nm, and 620 nm. |
| 地址 |
Tokyo JP |
