发明名称 Procede method for cleaning a semiconductor
摘要 A method for removing contaminating particles from the substrate of a semiconductor, comprising a step for depositing a thin film in dielectric material on the substrate. The method is characterized in that the deposition step is immediately followed by a chemical etching step for removing the deposited thin film.
申请公布号 US2006194442(A1) 申请公布日期 2006.08.31
申请号 US20050314743 申请日期 2005.12.21
申请人 BALTZINGER JEAN-LUC;ASSELIN ELISABETH;RENAUD OLIVIER 发明人 BALTZINGER JEAN-LUC;ASSELIN ELISABETH;RENAUD OLIVIER
分类号 H01L21/302 主分类号 H01L21/302
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