发明名称 |
Procede method for cleaning a semiconductor |
摘要 |
A method for removing contaminating particles from the substrate of a semiconductor, comprising a step for depositing a thin film in dielectric material on the substrate. The method is characterized in that the deposition step is immediately followed by a chemical etching step for removing the deposited thin film.
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申请公布号 |
US2006194442(A1) |
申请公布日期 |
2006.08.31 |
申请号 |
US20050314743 |
申请日期 |
2005.12.21 |
申请人 |
BALTZINGER JEAN-LUC;ASSELIN ELISABETH;RENAUD OLIVIER |
发明人 |
BALTZINGER JEAN-LUC;ASSELIN ELISABETH;RENAUD OLIVIER |
分类号 |
H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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