发明名称 |
SELF-ALIGNED, EMBEDDED PHASE CHANGE RAM AND MANUFACTURING METHOD |
摘要 |
An integrated circuit with an embedded memory comprises a substrate and a plurality of conductor layers arranged for interconnecting components of the integrated circuit. An intermediate layer in the plurality of conductor layers includes a first electrode having a top surface, a second electrode having a top surface, an insulating member between the first electrode and the second electrode. A bridge overlies the intermediate layer between the first and second electrodes across the insulating member, wherein the bridge comprises a programmable resistive memory material, such as a phase change material. A conductor in at least one layer in the plurality of conductor layers over said intermediate layer is connected to said bridge.
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申请公布号 |
US2006284158(A1) |
申请公布日期 |
2006.12.21 |
申请号 |
US20060424749 |
申请日期 |
2006.06.16 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
LUNG HSIANG-LAN;CHEN SHIH-HUNG |
分类号 |
H01L29/02 |
主分类号 |
H01L29/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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