METHOD FOR MANUFACTURING MAGNETORESISTANCE ELEMENT AND APPARATUS FOR MANUFACTURING MAGNETORESISTANCE ELEMENT

摘要

This invention provides a method for manufacturing a magnetoresistance element having a high MR ratio despite low RA and an apparatus for manufacturing a magnetoresistance element. A magnetoresistance element comprising an MgO (magnesium oxide) layer between a first ferromagnetic layer and a second ferromagnetic layer is produced by forming the MgO layer within a film forming chamber in which a material having a high gettering effect against oxidizing gases such as oxygen and water is applied onto the surface of constituent members, provided within the MgO layer forming chamber, for example, a film forming chamber inner wall (37) within a first film forming chamber (21), an inner wall in a deposition-preventive shield (36), a partition plate (22), and a shutter. The material having a high gettering effect may be a material having an oxygen gas adsorption energy value of not less than 145 kcal/mol. Ta (tantalum) as a material for constituting the magnetoresistance element is particularly preferred.