| 摘要 |
A magnetoresistive effect element comprises a first magnetic layer having a pinned magnetization direction, and a second magnetic layer having a magnetization direction changed corresponding to an outside magnetic field. A resistance state is changed corresponding to the magnetization direction of the second magnetic layer corresponding to the magnetization direction of the first magnetic layer. The second magnetic layer has a first recess which is dented toward an inside in one side parallel with a hard magnetization axis direction and a second recess dented toward the inside in the other side parallel with the hard magnetization axis direction.
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