SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device whose manufacturing process is not complicated and whose cost can be suppressed by forming a thin film transistor using an oxide semiconductor film represented by zinc oxide, and a manufacturing method thereof.

SOLUTION: This semiconductor device has a transistor that comprises a gate electrode arranged on a substrate, a gate insulating film arranged on the gate electrode, and an oxide semiconductor film arranged on the gate insulating film. Heat treatment is performed at least to the channel formation region of the oxide semiconductor film.

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