发明名称 METHOD OF SEPARATING SEMICONDUCTOR DIES FROM A WAFER
摘要 Methods are disclosed for manufacturing semiconductor device dies and for separating dies from a semiconductor wafer, wherein one or more channels are etched in the top of the wafer between individual die areas. Material is then removed from the bottom side of the wafer in order to separate the individual dies. Methods are also disclosed for removing material from the bottom side of the wafer dies, wherein a contoured surface is provided on the die bottom, such as through an etching process. In addition, methods are disclosed for removing material from the bottom side of a wafer, and for securing a semiconductor device to a surface. Semiconductor wafers and dies are also disclosed having contoured bottom surfaces.
申请公布号 KR100903472(B1) 申请公布日期 2009.06.18
申请号 KR20020044126 申请日期 2002.07.26
申请人 发明人
分类号 H01L21/78;H01L21/301;H01L21/304;H01L21/68;H01L29/06 主分类号 H01L21/78
代理机构 代理人
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