发明名称 APPARATUS AND METHOD FOR SELF BIAS IN GALLIUM NITRIDE (GaN) AMPLIFIERS
摘要 A wide bandgap voltage reference circuit generates a temperature stable negative bias reference voltage for use in wide bandgap circuits. The reference circuit uses field effect transistor (FET) based source feedback. It can also be used as source feedback in high power high bandgap device applications, where constant current is required over process and thermal variations.
申请公布号 WO2016172267(A1) 申请公布日期 2016.10.27
申请号 WO2016US28524 申请日期 2016.04.20
申请人 LOCKHEED MARTIN CORPORATION 发明人 HELMS, David R.
分类号 H03F3/16;H03F3/193 主分类号 H03F3/16
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