| 摘要 |
For obtaining filmy crystals of a chalcogen compound, there is a method involving forming a metal film made of Cu, In and Ga, and to subject the metal film to selenization process, but this method has a problem with homogeneity or productivity of the film. Although highly homogeneous filmy crystals of the chalcogen compound can be obtained by using a method capable of obtaining nanoparticles containing Cu-In-Ga-Se at low cost, this method cannot achieve satisfactory characteristics for use in a solar cell or the like, because the chalcogen compound has a high content of carbon and thus leads to a high resistance value. Chalcogen compound powder containing Cu-In-(Ga)-Se and having an average particle diameter (D50) of less than 0.5 (µm and a carbon content of 0.2% or less by mass in the powder is obtained in a way that metal hydroxide powder having an average primary particle diameter of 0.3 µm or less, and one or more kinds selected from a group consisting of selenium and selenium compounds are heated to 220°C or more in a reducing gas. |
