发明名称 |
HOLE FORMING METHOD, MEASURING APPARATUS AND CHIP SET |
摘要 |
A pore forming method in which a pore is formed in such a way that a first voltage is applied between electrodes that are disposed with a film in an electrolytic solution therebetween; a second voltage, which is lower than the first voltage, is applied between the electrodes; a current that flows between the electrodes owing to the application of the second voltage is measured; it is judged whether a value of a current is equal to or larger than a predefined threshold; and if the value of the current is smaller than the threshold, the above sequence is repeated until a pore is formed. In this case, the second voltage is a voltage that makes the value (IPF) of the current flowing through the film practically 0. With the use of the above method, a nanopore is formed in the film simply, easily, and accurately. |
申请公布号 |
US2016327513(A1) |
申请公布日期 |
2016.11.10 |
申请号 |
US201315104325 |
申请日期 |
2013.12.25 |
申请人 |
HITACHI, LTD. |
发明人 |
YANAGI Itaru;AKAHORI Rena;TAKEDA Kenichi |
分类号 |
G01N27/447;C12Q1/68;G01N33/487 |
主分类号 |
G01N27/447 |
代理机构 |
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代理人 |
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主权项 |
1. A method of forming a pore in a film comprising:
a first step of applying a first voltage between a first electrode and a second electrode, both first and second electrodes being disposed with the film in an electrolytic solution therebetween; a second step of applying a second voltage, which is lower than the first voltage, between the first electrode and the second electrode after the first voltage is applied and measuring a value of a current that flows between the first electrode and the second electrode owing to the application of the second voltage; and a third step of judging whether the value of the current is equal to or larger than a predefined threshold, wherein, if the value of the current is smaller than the threshold in the third step, the first step and the second step are repeated. |
地址 |
Tokyo JP |