发明名称 HOLE FORMING METHOD, MEASURING APPARATUS AND CHIP SET
摘要 A pore forming method in which a pore is formed in such a way that a first voltage is applied between electrodes that are disposed with a film in an electrolytic solution therebetween; a second voltage, which is lower than the first voltage, is applied between the electrodes; a current that flows between the electrodes owing to the application of the second voltage is measured; it is judged whether a value of a current is equal to or larger than a predefined threshold; and if the value of the current is smaller than the threshold, the above sequence is repeated until a pore is formed. In this case, the second voltage is a voltage that makes the value (IPF) of the current flowing through the film practically 0. With the use of the above method, a nanopore is formed in the film simply, easily, and accurately.
申请公布号 US2016327513(A1) 申请公布日期 2016.11.10
申请号 US201315104325 申请日期 2013.12.25
申请人 HITACHI, LTD. 发明人 YANAGI Itaru;AKAHORI Rena;TAKEDA Kenichi
分类号 G01N27/447;C12Q1/68;G01N33/487 主分类号 G01N27/447
代理机构 代理人
主权项 1. A method of forming a pore in a film comprising: a first step of applying a first voltage between a first electrode and a second electrode, both first and second electrodes being disposed with the film in an electrolytic solution therebetween; a second step of applying a second voltage, which is lower than the first voltage, between the first electrode and the second electrode after the first voltage is applied and measuring a value of a current that flows between the first electrode and the second electrode owing to the application of the second voltage; and a third step of judging whether the value of the current is equal to or larger than a predefined threshold, wherein, if the value of the current is smaller than the threshold in the third step, the first step and the second step are repeated.
地址 Tokyo JP