发明名称 High speed electroplating metallic conductors
摘要 One embodiment is a method for producing void-free electroplated metallic conductors inside openings by electrochemical deposition (ECD), said method including steps of: forming at least one opening in a substrate, said at least one opening having an aspect ratio in a range from 8:1 to 28:1; forming at least one barrier layer over the sidewalls of the at least one opening; depositing at least one seed layer over the at least one barrier layer; immersing the substrate in an electrolyte contained in an ECD cell, the ECD cell including at least one anode and a cathode, wherein the electrolyte includes plating metallic ions and at least one inhibitor additive; providing agitation of the electrolyte across the surface of the substrate by moving multiple non-contacting wiping blades relative to the substrate, wherein the agitation facilitates a limiting current density larger by at least an order of magnitude than a limiting current density without the agitation; and applying an average electroplating current density on the substrate, wherein the agitation, the concentrations of the metallic ions and the inhibitor additive, and the average electroplating current density are such as to produce void-free, electroplated metallic filling inside the at least one opening.
申请公布号 US9530653(B2) 申请公布日期 2016.12.27
申请号 US201615002342 申请日期 2016.01.20
申请人 Cohen Uri 发明人 Cohen Uri
分类号 C25D5/08;H01L21/77;H01L21/288;C25D5/02;H01L21/768;H05K3/42;C25D7/12;C25D21/10;H01L23/522;H05K3/06;H05K3/10;H01L23/48;H01L21/321;H01L23/532 主分类号 C25D5/08
代理机构 代理人
主权项 1. A method for void-free filling a metal or an alloy inside openings by electrochemical deposition (ECD), said method comprising steps of: (a) forming at least one opening and a field surrounding the at least one opening in a substrate, said at least one opening having a bottom and sidewalls surfaces and an aspect ratio in a range from 8:1 to 28:1; (b) forming at least one barrier layer over the field and sidewalls of the at least one opening; (c) depositing at least one seed layer over the at least one barrier layer; (d) immersing the substrate in an electrolyte contained in an electrochemical deposition (ECD) cell, the ECD cell comprising at least one anode and a cathode, wherein the cathode comprises at least a portion of the at least one seed layer, and wherein the electrolyte comprises plating metallic ions and at least one inhibitor additive, said metallic ions and said at least one inhibitor additive having concentrations; (e) providing agitation of the electrolyte across the surface of the substrate immersed in the electrolyte by moving multiple non-contacting wiping blades relative to the substrate and/or by moving the substrate relative to the multiple non-contacting wiping blades, wherein the agitation of the electrolyte facilitates a limiting current density which is larger by at least an order of magnitude than a limiting current density obtained without the agitation produced by moving the multiple non-contacting wiping blades and/or by moving the substrate; (f) applying electrical current between the at least one anode and the cathode to generate an average electroplating current density, wherein the agitation, the concentrations of the metallic ions and the at least one inhibitor additive, and the average electroplating current density are such as to produce void-free, electroplated metallic filling inside the at least one opening; and (g) following electroplating, the electroplated metal or alloy, and any barrier and seed layers above the field, as well as any excess electroplated metal or alloy over the at least one opening, are removed by chemical mechanical polishing (CMP).
地址 Palo Alto CA US