发明名称 IMPROVED CAPACITOR ELECTRODES
摘要 The present invention provides improved electrode and an improved process for constructing electrodes by depositing and annealing platinum onto a substrate such that the Pt films are smooth, of the proper orientation, and thermally stable. The improved electrodes are constructed by depositing Pt onto a non-reactive non-oxidating substrate, e.g., a thermally oxidized silicon wafer, using a technique such as physical vapor deposition (PVD).
申请公布号 WO0188969(A2) 申请公布日期 2001.11.22
申请号 WO2001US15853 申请日期 2001.05.16
申请人 APPLIED MATERIALS, INC. 发明人 NICKLES, ANNABEL, S.
分类号 C23C14/18;H01L21/02 主分类号 C23C14/18
代理机构 代理人
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