| 摘要 |
The semiconductor device comprises a collector layer 14 ; a base layer 16 of a carbon-doped Ga<SUB>x</SUB>In<SUB>1-x</SUB>As<SUB>y</SUB>Sb<SUB>1-y </SUB>layer having one surface connected to the collector layer 14; an emitter layer 18 connected the other surface of the base layer 16; a base contact layer 30 of a carbon-doped GaAsSb layer electrically connected to the base layer 16; and a base electrode 32 formed on the base contact layer 30. The semiconductor device of such structure can have a much reduced base resistance R<SUB>B</SUB>, whereby InP/GaInAsSb-based HBTs including InP/InGaAs-based HBTs can have higher maximum oscillation frequency f<SUB>max</SUB>. Because of the carbon-doped semiconductor layer the semiconductor device can have higher reliability.
|
