Phase-change memory device, phase-change channel transistor, and memory cell array

摘要

To reduce the voltage required to cause a phase transition from an amorphous phase to a crystalline phase, a phase-change memory device ( 1 ) comprises: a first electrode ( 6 ); a second electrode ( 8 ); and a memory layer ( 14 ) provided between the first ( 6 ) and second ( 8 ) electrodes, wherein the memory layer ( 14 ) includes at least a first layer ( 10 ) formed from a phase-change material which is stable in either the amorphous phase or the crystalline phase at room temperature, and a second layer ( 12 ) formed from a resistive material, and wherein the resistance value of the second layer ( 12 ) is smaller than the resistance value of the first layer ( 10 ) in the amorphous phase, but is larger than the resistance value of the first layer ( 10 ) in the crystalline phase.