METAL LAYER INDUCING STRAIN IN SILICON

摘要

A metal layer (62), especially a metal compound, induces strain into a gate channel (16) of a MOS transistor (60). Compressive strain of over 4GPa is available from sputter deposited TiN. The amount of strain can be controlled at least up to 1 IGPa, for example, by wafer biasing. The compressive strain may induce compressive strain in a PMOS channel when deposited around the channel and induce tensile strain in an NMOS channel when deposited over the channel.